型号:

IXFK60N55Q2

RoHS:无铅 / 符合
制造商:IXYS描述:MOSFET N-CH 550V 60A TO-264
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IXFK60N55Q2 PDF
标准包装 25
系列 HiPerFET™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 550V
电流 - 连续漏极(Id) @ 25° C 60A
开态Rds(最大)@ Id, Vgs @ 25° C 88 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大) 4.5V @ 8mA
闸电荷(Qg) @ Vgs 200nC @ 10V
输入电容 (Ciss) @ Vds 7300pF @ 25V
功率 - 最大 735W
安装类型 通孔
封装/外壳 TO-264-3,TO-264AA
供应商设备封装 TO-264AA
包装 管件
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